Thermo-mechanical and fracture properties in single-crystal silicon

Abstract : Single-crystal silicon is extensively used in the semiconductor industry. Even though most of the steps during processing involve somehow thermo-mechanical treatment of silicon, we will focus on two main domains where these properties play a major role: cleaving techniques used to obtain a thin silicon layer for photovoltaic applications and MEMS. The evolution and validation of these new processes often rely on numerical simulations. The accuracy of these simulations, however, requires accurate input data for a wide temperature range. Numerous studies have been performed, and most of the needed parameters are generally available in the literature, but unfortunately, some discrepancies are observed in terms of measured data regarding fracture mechanics parameters. The aim of this article is to gather all these data and discuss the validity of these properties between room temperature and 1273 K. Particular attention is given to silicon fracture properties depending on crystallographic orientations, and to the brittle-ductile temperature transition which can strongly affect the quality of silicon layers.
Type de document :
Article dans une revue
Liste complète des métadonnées

Littérature citée [81 références]  Voir  Masquer  Télécharger

https://hal-mines-paristech.archives-ouvertes.fr/hal-00720597
Contributeur : Magalie Prudon <>
Soumis le : lundi 25 juin 2018 - 09:58:21
Dernière modification le : jeudi 21 février 2019 - 10:30:02
Document(s) archivé(s) le : mercredi 26 septembre 2018 - 13:34:53

Fichier

Thermo-mechanical and fracture...
Fichiers produits par l'(les) auteur(s)

Identifiants

Citation

Alex Masolin, Pierre-Olivier Bouchard, Roberto Martini, Marc Bernacki. Thermo-mechanical and fracture properties in single-crystal silicon. Journal of Materials Science, Springer Verlag, 2013, 48 (3), pp.979-988. ⟨10.1007/s10853-012-6713-7⟩. ⟨hal-00720597⟩

Partager

Métriques

Consultations de la notice

313

Téléchargements de fichiers

431