EBSD coupled to SEM in situ annealing for assessing recrystallization and grain growth mechanisms in pure tantalum

Abstract : An in situ annealing stage has been developed in-house and integrated in the chamber of a Scanning Electron Microscope equipped with an Electron BackScattered Diffraction system. Based on the Joule effect, this device can reach the temperature of 1200°C at heating rates up to 100°C/s, avoiding microstructural evolutions during heating. A high-purity tantalum deformed sample has been annealed at variable temperature in the range 750°C-1030°C, and classical mechanisms of microstructural evolutions such as recrystallization and grain coarsening phenomena have been observed. Quantitative measurements of grain growth rates provide an estimate of the mean grain boundary mobility, which is consistent with the value estimated from physical parameters reported for that material. In situ annealing therefore appears to be suited for complementing bulk measurements at relatively high temperatures, in the context of recrystallization and grain growth in such a single-phase material.
Type de document :
Article dans une revue
Liste complète des métadonnées

Littérature citée [36 références]  Voir  Masquer  Télécharger

https://hal-mines-paristech.archives-ouvertes.fr/hal-00808226
Contributeur : Magalie Prudon <>
Soumis le : lundi 4 juin 2018 - 18:09:33
Dernière modification le : lundi 12 novembre 2018 - 10:59:36
Document(s) archivé(s) le : mercredi 26 septembre 2018 - 15:33:47

Fichiers

EBSD coupled to SEM in situ an...
Fichiers produits par l'(les) auteur(s)

Identifiants

Citation

Christophe Kerisit, Roland E. Logé, Suzanne Jacomet, Valérie Llorca, Nathalie Bozzolo. EBSD coupled to SEM in situ annealing for assessing recrystallization and grain growth mechanisms in pure tantalum. Journal of Microscopy, Wiley, 2013, 250 (3), pp.189-199. ⟨10.1111/jmi.12034⟩. ⟨hal-00808226⟩

Partager

Métriques

Consultations de la notice

362

Téléchargements de fichiers

168