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Communication dans un congrès

Modeling of Plastic Deformation and Recrystallization of Polycrystals Using Digital Microstructures and Adaptive Meshing Techniques

Abstract : The construction of Representative Volume Elements (RVEs) of polycrystalline microstructures is illustrated in the solid and semi-solid states. Using a level set framework, adaptive refinement of finite element meshes lead to virtual microstructures which describe very accurately the boundaries between grains or phases. In the solid state, Crystal Plasticity Finite Element (CPFEM) simulations show that the lowest accuracy regions are almost systematically located close to grain boundaries, while the reverse conclusion is not true. Mesh sizes are consequently refined close to the boundaries. The mechanical behaviour of constructed RVEs is investigated, under plastic deformation, and local microstructure evolutions are detailed. An Homogeneous Equivalent Medium (HEM) is used around the RVE in order to limit edge effects, and a sensitivity analysis on the properties of this HEM is performed. Comparisons with experimental data are given. Finally, primary recrystallization is modelled following plastic deformation of the polycrystalline aggregates. Grain boundary motion and nucleation of new grains are implemented within the level set framework. Boundary motion is described by a kinetic equation which is a function of thermodynamic driving forces. Comparisons with the Johnson-Mehl-Avrami-Kolmogorov theory are reported.
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Communication dans un congrès
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https://hal-mines-paristech.archives-ouvertes.fr/hal-00836283
Contributeur : Magalie Prudon <>
Soumis le : jeudi 20 juin 2013 - 16:41:30
Dernière modification le : mercredi 14 octobre 2020 - 04:02:08

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Roland E. Logé, Héba Resk, Zhidan Sun, Laurent Delannay, Marc Bernacki. Modeling of Plastic Deformation and Recrystallization of Polycrystals Using Digital Microstructures and Adaptive Meshing Techniques. 13th International Conference on Metal Forming, Sep 2010, Toyohashi, Japan. pp.Pages 1420-1425, ⟨10.1002/srin.201190002⟩. ⟨hal-00836283⟩

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