Abstract : A new finite element method is explored to model crack propagation in a silicon substrate bonded with a stress-inducing layer. This approach is based on the level-set method coupled with anisotropic remeshing to define the crack faces and tip. Furthermore, the Gθ method is used for computing the strain energy release rate and the propagation direction. Simulations are performed in a monolithic Lagrangian framework
Karim Hitti, Marc Bernacki, Stéphanie El Feghali, Pierre-Olivier Bouchard. A novel monolithic approach for modelling crack propagation. CSMA 2013 - 11ème colloque national en calcul des structures, May 2013, Giens, France. ⟨hal-00861818⟩