Characterization of electronic properties of natural type IIb diamonds

V.I. Zubkov (1) , A.V. Solomnikova (1) , J.E. Post (2) , E. Gaillou (2, 3) , J.E. Butler (1, 2)

1 LETI - Saint Petersburg Electrotechnical University
2 NMNH - Smithsonian Institution National Museum of Natural History
3 Musée de Minéralogie

Precision admittance spectroscopy measurements were carried out over wide temperature and frequency ranges for a set of natural single crystal type IIb diamond samples. Peaks of conductance spectra vs. temperature and frequency were used to compute the Arrhenius plots, and activation energies were derived from these plots. The capacitance-voltage profiling was used to estimate the majority charge carrier concentration and its distribution into depth of the samples. Apparent activation energies between 315 and 325 meV and the capture cross section of about 10− 13 cm2 were found for samples with uncompensated boron concentrations in the range of 1 to 5 × 1016 cm− 3 (0.06–0.3 ppm). The obtained boron concentrations are in good coincidence with FTIR results for the samples. Also, a reason for the difference between the observed admittance activation energy and the previously reported ionization energy for the acceptor boron in diamond (0.37 eV) is proposed.

Domaines: Science des matériaux [cond-mat.mtrl-sci]

V.I. Zubkov, A.V. Solomnikova, J.E. Post, E. Gaillou, J.E. Butler. Characterization of electronic properties of natural type IIb diamonds. Diamond and Related Materials, 2017, 72, pp.87-93. ⟨10.1016/j.diamond.2017.01.011⟩. ⟨hal-01493816⟩