Anisotropic electrical resistance in mesoscopic LaAlO 3 /SrTiO 3 devices with individual domain walls

Nicholas J. Goble 1 Richard Akrobetu 2 Hicham Zaid 3 Sukrit Sucharitakul 1 Marie-Hélène Berger 3 Alp Sehirlioglu 2 Xuan P.A. Gao 1
1 department of physics
2 Department of Materials Science and Engineering
3 MAT - Centre des Matériaux
Abstract : The crystal structure of bulk SrTiO 3 (STO) transitions from cubic to tetragonal at around 105 K. Recent local scanning probe measurements of LaAlO 3 /SrTiO 3 (LAO/STO) interfaces indicated the existence of spatially inhomogeneous electrical current paths and electrostatic potential associated with the structural domain formation in the tetragonal phase of STO. Here we report a study of temperature dependent electronic transport in combination with the polarized light microscopy of structural domains in mesoscopic LAO/STO devices. By reducing the size of the conductive interface to be comparable to that of a single tetragonal domain of STO, the anisotropy of interfacial electron conduction in relationship to the domain wall and its direction was characterized between T = 10–300 K. It was found that the four-point resistance measured with current parallel to the domain wall is larger than the resistance measured perpendicular to the domain wall. This observation is qualitatively consistent with the current diverting effect from a more conductive domain wall within the sample. Among all the samples studied, the maximum resistance ratio found is at least 10 and could be as large as 10 5 at T = 10 K. This electronic anisotropy may have implications on other oxide hetero-interfaces and the further understanding of electronic/magnetic phenomena found in LAO/STO.
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Nicholas J. Goble, Richard Akrobetu, Hicham Zaid, Sukrit Sucharitakul, Marie-Hélène Berger, et al.. Anisotropic electrical resistance in mesoscopic LaAlO 3 /SrTiO 3 devices with individual domain walls . Scientific Reports, Nature Publishing Group, 2017, 7, pp.44361. ⟨10.1038/srep44361⟩. ⟨hal-01498236⟩

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