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Conference papers
Discharge frequency and reagents choice effects on robustness of silicon nitride (Si3N4) thin layers deposited by PECVD (Plasma-Enhanced Chemical Vapor Deposition)
Catheline Cazako 1
Author IdHAL : catheline-ramsamy ORCID : https://orcid.org/0000-0001-6468-1771
Karim Inal 1
Author IdHAL : karim-inal
Alain Burr 1
Author IdHAL : alain-burr
Frédéric Georgi 1
Author IdHAL : frederic-georgi ORCID : https://orcid.org/0000-0002-2731-3811
Rodolphe Cauro
Author
1
CEMEF - Centre de Mise en Forme des Matériaux (Rue Claude Daunesse CS 10207 06904 Sophia Antipolis cedex - France)
- MINES ParisTech - École nationale supérieure des mines de Paris (60, boulevard Saint-Michel 75006 Paris - France)
- PSL - Université Paris sciences et lettres (60 rue Mazarine 75006 Paris - France)
- CNRS - Centre National de la Recherche Scientifique : UMR7635 (France)
Document type :
Conference papers
Complete list of metadatas
https://hal-mines-paristech.archives-ouvertes.fr/hal-01721378
Contributor : Karim Inal <>
Submitted on : Friday, March 2, 2018 - 9:21:50 AM
Last modification on : Thursday, September 24, 2020 - 5:22:58 PM
Contributor : Karim Inal <>
Submitted on : Friday, March 2, 2018 - 9:21:50 AM
Last modification on : Thursday, September 24, 2020 - 5:22:58 PM
Identifiers
- HAL Id : hal-01721378, version 1
Collections
ENSMP | CNRS | INSTITUT-TELECOM | ENSMP_CEMEF | PARISTECH | PSL
Citation
Catheline Cazako, Karim Inal, Alain Burr, Frédéric Georgi, Rodolphe Cauro. Discharge frequency and reagents choice effects on robustness of silicon nitride (Si3N4) thin layers deposited by PECVD (Plasma-Enhanced Chemical Vapor Deposition). European Conference on Heat Treatment and Surface Engineering, Jun 2017, Nice, France. ⟨hal-01721378⟩
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