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Discharge frequency and reagents choice effects on robustness of silicon nitride (Si3N4) thin layers deposited by PECVD (Plasma-Enhanced Chemical Vapor Deposition)

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https://hal-mines-paristech.archives-ouvertes.fr/hal-01721378
Contributor : Karim Inal <>
Submitted on : Friday, March 2, 2018 - 9:21:50 AM
Last modification on : Thursday, September 24, 2020 - 5:22:58 PM

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  • HAL Id : hal-01721378, version 1

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Catheline Cazako, Karim Inal, Alain Burr, Frédéric Georgi, Rodolphe Cauro. Discharge frequency and reagents choice effects on robustness of silicon nitride (Si3N4) thin layers deposited by PECVD (Plasma-Enhanced Chemical Vapor Deposition). European Conference on Heat Treatment and Surface Engineering, Jun 2017, Nice, France. ⟨hal-01721378⟩

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