Discharge frequency and reagents choice effects on robustness of silicon nitride (Si3N4) thin layers deposited by PECVD (Plasma-Enhanced Chemical Vapor Deposition)

Catheline Cazako; Karim Inal; Alain Burr; Frédéric Georgi; Rodolphe Cauro

Conference papers

Discharge frequency and reagents choice effects on robustness of silicon nitride (Si3N4) thin layers deposited by PECVD (Plasma-Enhanced Chemical Vapor Deposition)

Catheline Cazako ¹ Karim Inal ¹ Alain Burr ¹ Frédéric Georgi ¹ Rodolphe Cauro

1 CEMEF - Centre de Mise en Forme des Matériaux

Document type :

Conference papers

Domain :

Engineering Sciences [physics] / Materials

Engineering Sciences [physics] / Chemical and Process Engineering

Engineering Sciences [physics] / Micro and nanotechnologies/Microelectronics

Engineering Sciences [physics] / Mechanics [physics.med-ph] / Mechanics of materials [physics.class-ph]

Chemical Sciences / Cristallography

Physics [physics] / Condensed Matter [cond-mat] / Materials Science [cond-mat.mtrl-sci]

Physics [physics] / Physics [physics] / Chemical Physics [physics.chem-ph]

Complete list of metadata

https://hal-mines-paristech.archives-ouvertes.fr/hal-01721378
Contributor : Karim Inal Connect in order to contact the contributor
Submitted on : Friday, March 2, 2018 - 9:21:50 AM
Last modification on : Wednesday, November 17, 2021 - 12:28:27 PM

Discharge frequency and reagents choice effects on robustness of silicon nitride (Si3N4) thin layers deposited by PECVD (Plasma-Enhanced Chemical Vapor Deposition)

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Discharge frequency and reagents choice effects on robustness of silicon nitride (Si3N4) thin layers deposited by PECVD (Plasma-Enhanced Chemical Vapor Deposition)

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