Discharge frequency and reagents choice effects on robustness of silicon nitride (Si3N4) thin layers deposited by PECVD (Plasma-Enhanced Chemical Vapor Deposition)

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https://hal-mines-paristech.archives-ouvertes.fr/hal-01721378
Contributeur : Karim Inal <>
Soumis le : vendredi 2 mars 2018 - 09:21:50
Dernière modification le : lundi 12 novembre 2018 - 10:54:55

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  • HAL Id : hal-01721378, version 1

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Catheline Cazako, Karim Inal, Alain Burr, Frédéric Georgi, Rodolphe Cauro. Discharge frequency and reagents choice effects on robustness of silicon nitride (Si3N4) thin layers deposited by PECVD (Plasma-Enhanced Chemical Vapor Deposition). European Conference on Heat Treatment and Surface Engineering, Jun 2017, Nice, France. ⟨hal-01721378⟩

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